GUMMEL POON MODEL PDF

Mezilkree However, it is especially true of the bipolar Gummel-Poon model that certain values pooon the reverse characteristic parameters will affect the modeling of the forward operation and vice versa. This chapter provides example procedures to enable you to use the software as a tool to measure your devices and extract their model parameter values. If you have a support question, please gummel here. Since the most important operation of the bipolar transistor is the forward operation, this will be optimized after the reverse parameters. The objective of each section is to isolate a device characteristic and then to optimize only those model parameters which account for this device behaviour.

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Kagashura The procedures use a series of different setups to measure current or voltage versus bias under different bias conditions. In the third section, both of the reverse datasets are included and all of the parameters again optimized to achieve the best fit to all of the reverse data together. If necessary the entire sequence can be run multiple times in order to achieve a good fit to the measured data.

Gummel—Poon model The procedures are arranged in the most logical sequence to allow earlier measured data or extracted parameters to be used as a basis for later measurements or extractions.

If you have a support question, please click here. This chapter provides example procedures to enable you to use the software as a tool to measure your devices and extract their model parameter values.

The Agilent A high-frequency BJT model is a three-terminal version of the Gummel-Poon model, with a measurement and extraction methodology that has been morel specifically for high-frequency devices. Additionally, because accurate capacitance measurements are extremely difficult at high frequencies, the software computes the model junction capacitances from the measured S-parameter data, rather than using a CV meter.

This example describes how to extract a standard Gummel-Poon model for a bipolar transistor. However, it is especially true of the bipolar Gummel-Poon model that certain values of the reverse characteristic parameters will affect the modeling of the forward operation and vice versa.

The objective of each section is to isolate a device characteristic and then to optimize only those model parameters which account for this device behaviour. It may be necessary to repeat the sequence several times to achieve the best model fit to your data. Since the most important operation of the bipolar transistor is the forward operation, this will be optimized after the reverse parameters.

In this way, goodness of fit to the reverse characteristics can be sacrificed in order to achieve a good gummmel in forward operation. The optimization sequence, which fully automates the extraction of this Gummel-Poon bipolar model example, has six sections. In the BJT model, the parameters are very interdependent because of the inherent coupling of the model equations.

They take you step-by-step through a BJT measurement and parameter extraction. The Gummel-Poon BJT Model To extract the model, typical forward and reverse operation DC characteristics and reverse bias capacitance characteristics of each junction are required. The high-frequency BJT model provides improved accuracy for modeling the AC parameters of a high-frequency device, by using a network analyzer to measure the device S-parameters.

The sequence also requires the least number of configuration changes. Related Posts

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Gummel–Poon model

Tok Gummel-Poon Bipolar Model Extraction The objective of each section is to isolate a device characteristic and then to optimize only those model parameters which account for this device behaviour. If necessary the pokn sequence can be run multiple times in order to achieve a good fit to the measured data. In the BJT model, the parameters are very interdependent because of the inherent coupling mode the model equations. The measured values are later used in the extraction process to isolate individual parameters. The Agilent A high-frequency BJT model is a three-terminal version of the Gummel-Poon model, with a measurement and extraction methodology that has been developed specifically for high-frequency devices.

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